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A gate dielectric is formed by atomic layer deposition employing a hafnium ... Method for forming a gate insulating ... "Atomic Layer Deposition of Zirconium ...
The metal compounds have surprisingly and significantly improved uniformity when deposited by atomic layer deposition with cycle times of at least 10 seconds.
Thin film atomic layer deposition equipment for semiconductor processing. ... Atomic layer deposition ... for hafnium–aluminate and zirconium–aluminate ...
The use of atomic layer deposition ... Genus, Inc. Apparatus and method ... "Atomic Layer Deposition of Insulating Hafnium and Zirconium Nitrides", Chem. Mater. 16, ...
Systems and methods for insitu post atomic layer deposition ... Atomic layer deposited zirconium ... oxide and hafnium oxide using atomic layer deposition:
... layers provide an insulating layer in a variety of ... Atomic layer deposition of zirconium-doped ... Atomic layer deposition of hafnium lanthanum ...
A method employing rapid vapor deposition ... exposing a substrate surface to a metal-containing precursor gas to form a substantially saturated layer of metal ...
ALD metal oxide deposition process using direct oxidation: ... ALD metal oxide deposition process using direct ... Methods for atomic layer deposition of hafnium ...
Atomic layer deposition of metal oxynitride layers as gate dielectrics and ... Atomic layer deposition of hafnium ... Atomic layer deposited zirconium silicon ...
FIG. 1 depicts all atomic layer deposition system for ... including an insulating layer having a hafnium ... Deposition of hafnium oxide and/or zirconium oxide and ...
A gate dielectric is formed by atomic layer deposition of ... forming a layer of zirconium oxide on the layer of hafnium ... Method for forming a gate insulating ...
A capacitor structure is formed over a semiconductor substrate by atomic layer deposition to achieve ... An insulating layer ... Atomic layer deposited zirconium ...
Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis ... Genus Inc. website, ... zirconium oxide, ...
Dec 16, 2003· Method for forming L-shaped spacers with precise width control ... are formed by atomic layer deposition ... hafnium oxide, and zirconium ...
Genus, Inc. Radical-assisted ... Apparatuses and methods for atomic layer deposition of hafnium-containing high-k ... Insulating film formation method which exhibits ...
A dielectric layer containing an atomic layer deposited zirconium silicon oxide film disposed in an integrated circuit and a method of fabricating such a dielectric ...
The present invention provides atomic layer deposition systems and methods that include metal compounds with at least one ta. .
Methods of using atomic layer deposition to deposit a high dielectric constant material on ... zirconium oxide atomic layer ... Atomic layer deposition of hafnium ...
In one embodiment, a method for forming a dielectric stack on a substrate is provided which includes depositing a first layer of a dielectric material on a substrate ...
For example, the dielectric material may contain hafnium oxide, zirconium ... Method for forming gate insulating layer having ... Atomic layer deposition of hafnium ...
A dielectric film containing HfO 2 /ZrO 2 nanolaminates and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent ...
Mar 22, 2012· A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate ...
Process for semiconductor device fabrication in which ... and depositing by Atomic Layer Deposition an insulating layer on ... Atomic layer deposited zirconium ...
The use of atomic layer deposition (ALD) to form a dielectric layer of hafnium nitride (Hf3N4) and hafnium oxide (HfO2) and a method of fabricating such a combination ...
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